General physical studies on semiconductors using a scanning electron microscope

نویسنده

  • A. Gopinath
چکیده

2014 The beam-induced conductive-mode and cathodoluminescence mode have been used in the study of GaAs and InP epitaxial layers and Gunn devices. The paper outlines the techniques used. REVUE DE PHYSIQUE APPLIQUÉE FOME 9, MARS 1974, PAGE

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تاریخ انتشار 2017